Aixtron announced today that they have received an order for a silicon carbide (SiC) chemical vapor deposition (CVD) system from a major corporate research & development center in the US (northeast US, to be exact).
The R&D center ordered a VP508GFR 1x4-inch wafer configuration Hot-Wall reactor system with additional features including a Dual Tube Hot-Wall reactor with the Aixtron patented Gas Foil Rotation® for individual wafer uniformity and high temperature capability. The deliver will be in 2Q 2011 (the order was placed in 3Q 2010).
Posted: Jan 18,2011 by Ron Mertens