Aixtron - Page 2

Researchers from the University of Texas at Austin, in collaboration with Aixtron developed a new method to grow high-quality wafer-scale (300 mm) graphene sheets. This process may enable the integration of graphene with Silicon CMOS and pave the way towards graphene-based electronics.

The method is based on CVD growth on polycrystalline copper film coated silicon substrates. They report that their graphene has better charge carrier transport characteristics compared to previously synthesized poly- or single-crystalline wafers. The graphene has few defects and covers over 96% of the 300-mm wafer substrate.

Aixtron announced today that Saudi Arabia's King Abdullah University of Science and Technology (KAUST) has ordered an AIX BM plasma-enhanced CVD system to support their graphene and carbon nanotubes research. The reactor can handle 4" substrates and Aixtron will deliver it in Q3 2014.

This is KAUST's first BM Pro system, which will be used to expand their graphene research with an aim to find a "wide range of new applications".

Aixtron announced today that Shanghai University ordered a BM R&D reactor that will be used for graphene and CNT research at the University's Sino-Sweden Microsystem Integration Technology Center (SMIT).

The University researchers will use this new reactor for their research into CNT and graphene application using thermal- and plasma-based chemical vapor deposition (CVD). The researchers aim to develop next generation thermal interface/dissipating materials, heat spreaders, multi-chip interconnects and through silicon vias (TSV) for semiconductor chip packaging.

Aixtron reported today that the company is involved with several European graphene research projects. In fact, Aixtron says they are a key-partner in several EU projects. First of all, Aixtron is leading Production Work Package in the Graphene Flagship, EU's $1 billion graphene drive.

In the GRAFOL project, Aixtron applies their scaling know-how to develop large scale equipment for wafer-based graphene and continuous production of foil-based graphene for transistors and transparent conductive films. In another project called MEM4WIN Aixtron employs their batch-based deposition technology to improve the throughput of graphene production for smart windows.

Aixtron announced today that China's National Center for Nanoscience and Technology (NCNST) ordered a BM R&D system to grow graphene and CNTs on 2" substrates.

Dr. Qing Dai from NCNST says that their research currently focuses on the characterization of CNTs and on plasmonic properties of graphene. They aim to build nanophotonic devices such as terahertz waveguides. The BM system will also be used to grow 3D nanostructures combining CNT and graphene.

Aixtron announced today that the University of Massachusetts (UMass) ordered a BM-4 deposition system for processing 4-inch substrates. The BM-4 was shipped to the University’s Emerging Technologies and Innovation Center (ETIC).

The system will be used for the integration of carbon nanotubes (CNT) and graphene into a large variety of electronic applications ranging from high frequency transistors, energy storage and flexible electronics. Aixtron says that the BM is a highly flexible system which can deposit both graphene and CNT materials with precisely controlled critical surface dimensions. The BM system also features automatic process control, easy recipe editing, an integrated process camera and remote operation via TCP/IP networking.

The wall street journal posted an interesting article and video on graphene. The article discusses the current state of research and business, possible graphene applications and the rush to patent related technologies.

The article starts with the Cambridge graphene research center and then discusses several companies and their graphene programs, including IBM, Nokia, BlueStone Global Tech, Vorbeck Materials, Lockheed Martin and Aixtron.

Researchers from Japan's AIST and NIMS institues developed a new low power graphene transistor design and produced a working prototype. The new transistor is based on a new operation principle, where two electrodes and two top gates were arranged on the graphene, and crystal defects were introduced by irradiating a helium ion beam on the graphene between the top gates.

In this transistor charge movement can be controlled efficiently by applying an independent voltage to the two top gates. Transistor polarity can be reversed by electrical control. That's the first transistor that can do this.

Aixtron announced that China's Zhejiang University has ordered an AIXTRON BM 2-inch R&D system. The system (which was ordered in Q2 2012 and which will be delivered in Q4 2012) will be used for advance CNT and graphene research.

The BM R&D system features a high performance, fast response heater (1000° C/minute ramp rate) which enables complex process steps at different temperatures to be reproducibly implemented, such as catalyst pre-annealing, growth and post annealing.

Aixtron announced today that they have sold a new 4" BM Pro PECVD system for the Institute of Metal Research (IMR) at the Chinese Academy of Sciences. The IMR will use the system to produce carbon nanotubes and graphene. The order was placed in the first quarter of 2012 and the system will be delivered in the third quarter of 2012.