Graphene Semiconductors: Introduction and Market status - Page 5

Fujitsu Laboratories announced that they have developed new technology for forming Graphene transistors directly on the surface of large-scale insulating substrates at low temperatures while employing chemical-vapor deposition techniques which are in widespread use in semiconductor manufacturing.

Compared to the temperatures of 800-1000 degree C at which graphene is formed with conventional methods, Fujitsu has succeeded in significantly lowering the graphene fabrication-temperature to 650 degree C thus allowing for graphene transistors to be formed directly on a variety of insulator substrates, including substrates that are sensitive to the higher temperatures.

European researchers discovered that stretching graphene can make it a good semiconductor. Normally, there is a lack of a 'gap' Graphene's energy spectrum. This gap is present in silicon and other materials used by the semiconductor industry. Without the gap, Graphene tends to 'leak' energy when used as a transistor.

The researchers discovered that when you stretch graphene, the semiconducting gap opens.