The aim is to develop a new class of integrated photonic and optoelectronic devices based on 2d materials, 2d heterostructures and hybrid platforms, combining the versatile properties of 2d materials with conventional 3d semiconductors. These devices will then be used in a wide range of applications, such as on-chip optical routing, flexible optoelectronics, light emission and optical sensing. This is an ambitious research program, with a strong interdisciplinary nature, across photonics, plasmonics, device physics, electrical engineering and nanotechnology, and it will require the realization of novel devices for wide range of applications such as photodetectors, optical modulators, optical amplifiers, lasers, biosensors etc. based on integrated 2d materials and hetero-structures.
The successful candidate will hold a PhD in Photonics, Physics, Material Science, Nanotechnology or Electrical Engineering with a proven track record in photonics, optoelectronics of low dimensional systems, plasmonics, near-field optics, CMOS technology and nanofabrication, including on-chip optical and electrical characterizations, pump-probe techniques and fast electro-optical measurements. Preference will be given to candidates with proven track record in silicon photonics, fabrication and optoelectronic characterization of graphene, related layered materials or other nanoscale photonic devices, as demonstrated by publications in major journals. A solid understanding of device physics and the physics of graphene and related materials is required. Experience in handing collaborations within EU projects, including reporting and attendance to project meetings is also essential. The candidate will also have the ability continually update knowledge in the specialist area and engage in continuous professional development; have experience of managing own workload
Fixed-term: The funds for this post are available for 24 months in the first instance.
