Graphene transistors can work without much low-frequency electronic noise
Researchers from the Nano-Device Laboratory research at the University of California - Riverside (UCR) and a laboratory at Rensselaer Polytechnic Institute (RPI) says low-frequency noise in a double-gate graphene transistors is low...
The team has designed and built single-layer graphene transistors with two gates: the back gate made of degenerately doped silicon wafer and the metallic top gate separated from the graphene device channel by HfO2 (a material recently introduced by semiconductor industry for conventional silicon transistors).
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Posted: Jul 14,2009