A team of Chinese scientists has developed graphene-based high temperature-resistant memristors, which are leading candidates for future storage and neuromorphic computing, with potential to address existing challenges in the development of electronic devices.
The sandwich-like memristor is composed of two layers of graphene, with a layer of molybdenum disulfide in the middle. The memristor devices exhibit excellent thermal stability and can operate at a high temperature of up to 340 degrees Celsius.
"Traditionally, memristors running at high temperatures need a cooling system to guarantee smooth operations, but that increases the cost and energy consumption and lowers reliability," said the team.
While the research is still at the laboratory level, the researchers have already applied for patents in China and the United States.