Researchers from the University of California and Rice University developed a new rapid method to synthesize high quality large-area Bernal (AB) stacked bilayer graphene sheets.
During the same research, the first bi-layer graphene double-gate field-effect transistor (G-FET) was also demonstrated. This G-FET features the best on/off switching ratio and carrier mobility.
In a bilayer graphene, if the two layers are aligned in a certain orientation, it is called a Bernal (AB) orientation, and it opens a considerable band gap.
The researchers managed to grow a 3x3 inch bilayer graphene within a few minutes at a relatively low temperature (920 Celsius). They used an engineered bifunctional (Cu:Ni) alloy surface.
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Posted: May 04,2014 by Ron Mertens
