Graphene solves RRAM's failure problems

Resistive RAM (RRAM) is a promising new next-generation memory technology that is being commercialized by several companies. Researchers at the Chinese Academy of Sciences have been study a device failure caused by two processes in cation-based RRAM, and have discovered that graphene may hold the key.

If a single-layer graphene is added to the device, and used as an ion barrier between two metallic layers in the device, the RRAM cell is more reliable while still maintaining high performance.